열화학증착(TCVD)기술의 주요 사항은 기판 위에 얇은 필름이 합성되는 고압의 reactor로
1,000ºC 가량의 고온에서 가스들을 유입시키는 것입니다.
| Reactor |
Tube type 4 inch diameter quartz. Connected to a glove box. |
|---|---|
| Substrate Size |
Lateral insertion of 10 mm to < 4 inch wafers possible (Loading frames for small samples). Rolled metallic foils can be loaded to synthesize A4 sized or larger 2D materials. |
| Furnace |
Dual-zone heater and controller for graphene/h-BN synthesis. Single-zone precursor heater and Dual-zone deposition heater for TMDC synthesis. The heaters are movable along two rails and the distance can be motor-controlled. Remote RF Plasma Module. |
| Base Pressure | 10⁻⁵ mbar (depending on the dryness of source). |
| Operating Pressure | 10⁻³ mbar ~ 1 bar |
| Precursor |
Max 10 gas lines (ex. CH₄, B₂H₆, Ar, H₂, O₂, etc.) Metal oxide sources of various transition metals placed in Heat Zone 1 for solid source growth. |
| Other metal organic (MO) sources | Extra 3 metal-organic source injection ports are included. (ex Mo(CO)₆, Fe(CO)₅) |
| Flow control |
Precursor gases: 0.1 ~ 10 sccm Other gases: 10 ~ 1000 sccm Automatic flow control. |
| Vacuum |
Cold trap for residual sources. Turbo pump 450 l/s (ISO160) < 10⁻⁶ mbar. Dry scroll pump < 10⁻¹ mbar. Main gate valve pneumatic type / fore-line / roughing angle valve / foamed bellows. By-pass pumping adaptor, clamp & centering. |
| System Control |
Control PC system. Serial network module. Remote IO Module. System base programming / System recipe control module / System date file save module. Software upgrade support. |
| Seoul National University Graphene Research Center | Israel Institute of Technology |
| Duke University |
견적 요청 및 견적서 제공
고객의 구매의사 확인 (고객으로부터 Purchase order 전달)
Invoice 및 Payment 자료 제공
1차 입금 완료 시 기계 제작 돌입 및 Training Program 제공
제작 완료 후 최종 테스트 통과 시 제품 포장 및 발송 진행
최대 4일 이내 고객 사이트에 도착 완료