TEL
+82 31 548 2042
FAX
+82-70-5080-0292
EMAIL
info@graphenesq.com

CVD Equipment

TCVD-DC100CA

Premium Custom Design Dual CVD System with a Glove Box

Chemical vapor deposition (CVD) system for the syntheses of 2D materials at scales from a chip to a wafer,
including the synthesis of graphene, h-BN, TMDCs on various substrates by use of gas-phase or solid precursors
and metal-organic (MO) sources. The glove box enables the synthesis of various air-sensitive TMDCs.

Thermal Chemical Vapor Deposition

The main Thermal CVD technology involves adding gases to the pressurized reactor at high temperature of about 1,000℃ where thin film is synthesized onto substrates.

Size

3000 (W) x 1800 (H) x 750 (D)

Features

Size (mm): 3000 (W) x 1800 (H) x 750 (D)
Up to 10 gases and 3 MO sources for gas-phase synthesis.
Motor-controlled movable heater for fast heating and cooling (patented).
Fully computer-controlled programmable recipes.
TCVD100 platform: Proven performance for ~150 systems for more than 10 years.
Invited training for full sample preparation processes from synthesis, etching, and transfer.
Supply of high-quality source materials.
1 year warranty included (2 year extended).
CVD chambers connected to a Glove Box. Free from air exposure.

Specifications

Reactor Tube type 4 inch diameter quartz.
Connected to a glove box.
Substrate Size Lateral insertion of 10 mm to < 4 inch wafers possible (Loading frames for small samples).
Rolled metallic foils can be loaded to synthesize A4 sized or larger 2D materials.
Furnace Dual-zone heater and controller for graphene/h-BN synthesis. Single-zone precursor heater and Dual-zone deposition heater for TMDC synthesis.
The heaters are movable along two rails and the distance can be motor-controlled.
Remote RF Plasma Module.
Base Pressure 10⁻⁵ mbar (depending on the dryness of source).
Operating Pressure 10⁻³ mbar ~ 1 bar
Precursor Max 10 gas lines (ex. CH₄, B₂H₆, Ar, H₂, O₂, etc.)
Metal oxide sources of various transition metals placed in Heat Zone 1 for solid source growth.
Other metal organic (MO) sources Extra 3 metal-organic source injection ports are included. (ex Mo(CO)₆, Fe(CO)₅)
Flow control Precursor gases: 0.1 ~ 10 sccm
Other gases: 10 ~ 1000 sccm
Automatic flow control.
Vacuum Cold trap for residual sources.
Turbo pump 450 l/s (ISO160) < 10⁻⁶ mbar.
Dry scroll pump < 10⁻¹ mbar.
Main gate valve pneumatic type / fore-line / roughing angle valve / foamed bellows.
By-pass pumping adaptor, clamp & centering.
System Control Control PC system.
Serial network module.
Remote IO Module.
System base programming / System recipe control module / System date file save module.
Software upgrade support.

Customer List

Seoul National University Graphene Research Center Israel Institute of Technology
Duke University

Quality Assurance

Graphene Square provides customers who purchase equipment with a one-year warranty on all accessories (except quartz glass and rubber O-rings).
If you find a part abnormality or system error in your equipment within the period, please contact us immediately and a repairman will be dispatched immediately within 24 hours.

Delivery period

All equipment that has been manufactured and inspected will be delivered on the same day to the place you have designated.

Equipment Purchase Process

01

Quotation Request

Quotation Request and Quotation provided

02

Confirmation of intention to purchase

Customer's intention to purchase
(Purchase Order from Customer)

03

Invoice / Payment

Provide Invoice and Payment data

04

Provide Production • Training program

Provide machine production and training program upon completion of the first deposit

05

Equipment Operation Test /
Product packaging, Shipment

After production is completed, product packaging and shipping are carried out

06

Arrival is completed

Arrival is completed at the customer site
within up to 4 days

TEL
+82 31 548 2042
FAX
+82-70-5080-0292
EMAIL
info@graphenesq.com
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